Accession Number:

ADA067164

Title:

GaInAs and GaInAsP MBE Crystal Growth.

Descriptive Note:

Annual rept. 1 May 77-30 Apr 78,

Corporate Author:

MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB

Personal Author(s):

• Calawa,Arthur R.

Report Date:

1978-04-30

Pagination or Media Count:

53.0

Abstract:

The use of epitaxial layers and of heteroepitaxial layers of compound semiconductors in recent years has had a significant impact on the development of new and useful semiconductor devices. Interest in the quaternary alloy Ga1-xInxAs1-yPy is primarily based on the applications of this material to optical devices such as light emitting diodes LED, photo-emissive cathodes and heterojunction lasers. The principal advantages of this material are that lattice-matched layers can be epitaxially grown on InP over a wide composition range, which permits the light emission of lasers and LEDs to be extended to longer wavelengths where optical fiber transmission is optimal. Current state-of-the-art optical fibers have their best characteristics--minimum loss and minimum dispersion. It is also of importance in electroopitcal device applications that GaInAsP is lattice-matched to a binary compound substrate InP, which is transparent at the operating wavelength of the devices. The potential importance of these materials in microwave devices such as the metal-epitaxial semiconductor field-effect transistor MESFET and transferred electron devices is demonstrated in a comparison of the electron velocity-field characteristics of these alloys and of GaAs.

Descriptors:

• *SEMICONDUCTORS
• *CRYSTAL GROWTH
• GALLIUM ARSENIDES
• HETEROJUNCTIONS
• SUBSTRATES
• LASERS
• ELECTRICAL PROPERTIES
• MOLECULAR BEAMS
• HYDROGEN
• CATHODES
• SEMICONDUCTING FILMS
• INDIUM PHOSPHIDES
• QUATERNARY COMPOUNDS
• LIGHT EMITTING DIODES
• GALLIUM PHOSPHIDES

Subject Categories:

• Crystallography
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE