Accession Number:

ADA066886

Title:

Neutron Damage Correlation Experiments in Semiconductor Devices.

Descriptive Note:

Technical rept.,

Corporate Author:

HARRY DIAMOND LABS ADELPHI MD

Personal Author(s):

Report Date:

1979-02-01

Pagination or Media Count:

27.0

Abstract:

Studies of radiation damage equivalence have been conducted in four different neutron environments by using silicon transistors with gain-bandwidth products covering the range from 1 MHz to 2 GHz and power ratings covering the range from 200 mW to 115 W. The neutron environments were obtained from two TRIGA reactors, a fast-burst reactor, a 14-MeV generator, and a Californium 252 fission source. Experimentally, damage factors were obtained by comparisons of changes in the reciprocal of the common-emitter dc gain as a function of measured fluences. The damage factor was the slope of the resulting curve. Corrections were made for the fraction of total damage associated with gamma radiation effects. The ratios of the slopes of the data from the different irradiation facilities give an indication of spectral differences among the facilities. These ratios do not appear to be strong functions of collector current or of the transistor type. The experimental data were compared with theoretical calculations of displacement damage as defined by the damage curves of Messenger and of Holmes. The ratio of 14-MeV generator to fast-burst reactor damage is less than predicted theoretically the ratio of fast-burst reactor to TRIGA reactor is higher than calculated. Uncertainties in the parameter and dosimetry measurements could account for some of the observed differences, but the uncertainty in the spectra content of the reactors is probably the major contributor. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Nuclear Radiation Shielding, Protection and Safety
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE