Ge:Ga Photoconductors in Low Infrared Backgrounds,
CALIFORNIA UNIV BERKELEY LAWRENCE BERKELEY LAB
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Photon noise limited performance of photoconductive detectors made from gallium doped germanium in very low infrared backgrounds less than or equal to ten to the minus 8th power incident photons per second is reported in this report. These detectors were made from a large volume crystal of GeGa of the quality used for lithium drifted germanium gamma-ray spectrometers. This material contained very low concentrations of deep traps and minority impurities mainly phosphorus. These conditions were made possible by the use of high purity Ge crystal growing equipment.
- Infrared Detection and Detectors
- Electricity and Magnetism