Accession Number:

ADA066625

Title:

Ge:Ga Photoconductors in Low Infrared Backgrounds,

Descriptive Note:

Corporate Author:

CALIFORNIA UNIV BERKELEY LAWRENCE BERKELEY LAB

Report Date:

1979-01-29

Pagination or Media Count:

12.0

Abstract:

Photon noise limited performance of photoconductive detectors made from gallium doped germanium in very low infrared backgrounds less than or equal to ten to the minus 8th power incident photons per second is reported in this report. These detectors were made from a large volume crystal of GeGa of the quality used for lithium drifted germanium gamma-ray spectrometers. This material contained very low concentrations of deep traps and minority impurities mainly phosphorus. These conditions were made possible by the use of high purity Ge crystal growing equipment.

Subject Categories:

  • Infrared Detection and Detectors
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE