X-Band Solid-State Module for Airborne Array Radar Applications.
Final rept. 1 Oct 76-30 Sep 78,
RCA LABS PRINCETON N J
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This final report summarizes the results achieved in a 21-month research program including a 3-month no-cost extension to develop an amplifier module suited to airborne active array radar applications. During the course of this program, advances have been made in the areas of GaAs substrate preparation, design of new FET types having improved performance, fabrication of amplifiers having greater than 1-W output over the 9- to 10-GHz frequency range, and development of pulsed phase characterization techniques which demonstrate the suitability of power FET amplifiers for a pulsed phased array. RCA now has three AsH3GaHC1H2 hydride and one AsC13GaH2 trichloride reactors. These reactors have been used extensively in a program to develop improved buffer layers on GaAs substrates suitable for FET fabrication. Cr-doped buffer layers have been developed with excellent surface morphology, voltage breakdowns in excess of 1500 V and resistivities of about 10 to the 7th power ohm-cm. Undoped buffer layers have been grown using the two-buffer AsC13 system and resistivities of about 100,000 ohm-cm have been achieved. In the course of this program, new power FET types have been developed which achieve greater power levels than had previously been available. A unit having eight parallel gates, designated as an 8G type, has achieved a power of 854 mW at 10 GHz with over 28 power-added efficiency.
- Electrical and Electronic Equipment
- Active and Passive Radar Detection and Equipment
- Solid State Physics