Advanced Archival Memory
Interim technical rept. 1 Jun-31 Dec 1977
GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT SCHENECTADY NY
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During this six-month period, work on the Advanced Archival Memory System has been concentrated on an ion-implantation based storage concept. Beam and target systems have been developed in parallel. Also, alternative data storage approaches have continued to be explored, and overall systems applications have been studied to provide guidance regarding the important technical parameters. The high current ion writing station appears feasible, and detailed design and construction were begun. However, the ion implant target bit packing density appears to be limited to 0.25 microns under best conditions, and to about 0.40 microns with presently available ion sources. The system applications study indicated that, if the technical goals of the program are met, this system should have superior priceperformance features to all identified competitors.
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