Advanced Archival Memory
Interim rept. no. 3, 16 Oct 1976-15 Jan 1977
GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT SCHENECTADY NY
Pagination or Media Count:
During this reporting period, effort in the archival memory program included experimental and theoretical studies on planar diode substrates to determine a more exact doping profile measured by anodic oxidation and stripping techniques improved implanting methods to place the peak of implant distribution near the N layer surface writing experiments with a variety of implanted inert ions and a determination of the writing efficiencies an initial model of the alloy junction formation was made eutectic alloying with single laser pulses was achieved the electron beam write station was made operational and the write optics study was begun with a general analysis of the various configurations.
- Computer Hardware