Accession Number:

ADA065322

Title:

Investigation of InP Technology.

Descriptive Note:

Interim rept. 1 Aug 77-1 Aug 78,

Corporate Author:

VARIAN ASSOCIATES INC PALO ALTO CA

Personal Author(s):

Report Date:

1979-01-01

Pagination or Media Count:

39.0

Abstract:

Undoubtedly InP is becoming a very important semiconductor, in particular for optoelectronic applications. Although InP-based device results are appearing with increased frequency in both microwave and optoelectronic areas, substrate growth and characterization have been limited to a few government contract reports. This program is aimed at the investigation of InP-based technology from polycrystalline synthesis to epitaxial growth. Of primary consideration is the development of technology for reliably synthesizing polycrystalline InP from the elements. Even though the growth of single-crystal InP is well developed, based on the commercial equipment for LEC-growth of GaAs and GaP, very little information is available on the synthesis of InP from the elements.

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE