Non-Localized Impact Ionization in Semi-Conductors.
Final rept. 1 Aug 74-31 Jul 77,
UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES
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Studies have been directed towards improving the understanding of the nonlocalized nature of impact ionization i.e., the fact that carriers must be field accelerated by at least the threshold energy for impact ionization before they can create an electron-hole pair. Work has been directed specifically towards GaAs and InP in Schottky barrier configurations. For GaAs, studies have shown that momentum and energy conservation impose an effective density of available states that grows as the 2 12 power of the energy in excess of threshold as opposed to the 3 12 and 5 power alternatives. It has also been that the capture cross sections that we can deduce from cascade production by high energy primary radiation are consistent with the modeling needed for the ionization coefficient. This problem was investigated using a Markov formulation and the results of the energy required per pair produced are strongly influenced by the ratio of pair production cross section to phonon scattering cross section at a primary energy of twice the threshold energy. The energy dependence about this energy serves mainly to perturb the result.
- Solid State Physics