Hardness Assurance for Neutron-Induced Displacement Effects in Semiconductor Devices.
IRT CORP SAN DIEGO CALIF
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The objective of this program phase was to provide an effective means of purchasing semiconductor devices whose neutron-induced response is within known and acceptable limits. The scope of the effort was limited to those procedures for the neutron environment for bipolar transistors, temperature-compensated reference diodes, TTL5474 series digital integrated circuits, 741-type operational amplifiers and junction field effects transistorsJFETs. This final report covers the method by which the program objectives were met and provides background information for the companion document Hardness Assurance Guidelines for Displacement Effects for Bipolar Devices HDL-CR-78-135-1. Specifically this final report covers background lot sample statistical methods, assesses existing CRIC experimental neutron device data, and provides the background rationale for the selection of the Hardness Assurance controls. Author
- Electrical and Electronic Equipment
- Nuclear Radiation Shielding, Protection and Safety
- Solid State Physics