Hardness Assurance Guidelines for Displacement Effects for Bipolar Devices.
Rept. for Jul 77-Mar 78,
IRT CORP SAN DIEGO CALIF
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The objective of this document is to provide an effective means of obtaining semiconductor devices whose neutron-induced response is within known and acceptable limits. The scope of the effort was limited to those procedures for the neutron environment for bipolar transistors, zener diodes, TTL 5474 series digital integrated circuits, 741-type operational amplifiers, and junction field effect transistors. The objective is met by imposing two levels of Hardness Assurance controls on both the supplier and the user. The supplier levels are called control levels, whereas for the user they are quality levels. For the supplier the difference between levels 1 and 2 are the numbers of Hardness Assurance controls to which the part is subjected in order to be qualified control level 2 requires screens and process controls, and level 1 is achieved by adding inspection lot radiation tests. For the user, the difference between quality levels 1 and 2 is their lot quality, i.e., the percent of devices in each lot which pass the failure criteria. In level 2 lots, or 80 percent of the devices will pass the K sub D criteria with 90 percent confidence. Level 1 screening is designed such that 99.9 percent of the devices in bipolar transistor lots will pass. Author
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