Combined Effect of Aging and Neutron Irradiation on Semiconductor Avalanche Voltage.
ARMY MISSILE RESEARCH AND DEVELOPMENT COMMAND REDSTONE ARSENAL AL ENGINEERING LAB
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This report presents the results of an investigation into the combined effects of neutron irradiation and aging on the breakdown voltage in transistors. The combined effect was found to be a simple additive effect. It was determined from other results of the investigation that transistor parameters change as a function of the number of times the breakdown voltage is measured and that the gain of the transistor is degraded more if the device has been aged before irradiation than if the device has been irradiated and then aged. This last result brings into question the validity of present methods of establishing neutron susceptibility levels. Author
- Electrical and Electronic Equipment
- Fission Reactor Physics
- Solid State Physics