Optical Bi-Refringent Technique in Defect Characterization.
Final rept. 1 Mar 77-30 Sep 78,
IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS N Y
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Defects in GaP, Garnets, and Si have been examined and characterized by stress induced optical bi-refringence. This technique is explored in examining devices and it is suggested that its utility lies in the early stages of device fabrication rather than towards the end. Author