Accession Number:

ADA064761

Title:

Cathodoluminescence on the Effects of Te Implantation and Laser Annealing in Gallium Arsenide.

Descriptive Note:

Master's thesis,

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING

Personal Author(s):

Report Date:

1978-12-01

Pagination or Media Count:

65.0

Abstract:

The United States Air Force uses devices which must operate in high temperature environments where intrinsic pure semiconductors do not perform well. With the intentional addition of impurity ions doping into the lattice of a crystal, the semiconductor gallium arsenide GaAs should have the electrical properties required for operation in the environments mentioned above. Gallium arsenide is an intermetallic compound formed from a group III element gallium and a group V element arsenic. It crystallizes in the zinc blende structure and has physical properties which are similar to those of the covalent group IV semiconductors, germanium and silicon. The electrical properties, such as high electron mobility, have made GaAs very useful in many technical applications. However, the promise that GaAs shows for use in future devices, such as microwave devices, is based upon the ability to provide the necessary impurity concentrations in the pure crystal.

Subject Categories:

  • Optics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE