Accession Number:

ADA064758

Title:

High Power Continuous Wave Semiconductor Injection Laser

Descriptive Note:

Master's thesis

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSONAFB OH SCHOOL OF ENGINEERING

Personal Author(s):

Report Date:

1978-12-01

Pagination or Media Count:

78.0

Abstract:

A review of fundamental semiconductor laser theory is presented, followed by a theoretical analysis of the figures of merit, which affect high power CW operation. It is postulated that high CW power of the order of several watts can be obtained from long lasers with low end reflectivities. The removal of heat from the junction region can be best accomplished in narrow lasers with a width near 50 micrometers. Further optimization of output power can be achieved in devices with a thin optical cavity. However, the optical cavity must be sufficiently thick to provide an output facet area large enough to accommodate high optical flux, without experiencing catastrophic damage. Diffused homojunction structures are not suitable for implementing these parameters. A Large Optical Cavity, epitaxially grown heterostructure device appears to be the most suitable structure for high power CW operation. Trends in output power with varying laser length, width, reflectivity, and cavity thickness are presented graphically. Author

Subject Categories:

  • Lasers and Masers
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE