Nonreflecting Vertical Junction Silicon Solar Cell Optimization.
Final rept. 15 May 76-31 Aug 78,
SOLAREX CORP ROCKVILLE MD
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This research program has resulted in the development of high conversion efficiency radiation resistant vertical junction silicon solar cells. New techniques of oxidation growth and the use of photolithography enable the use of an orientation dependent etch to produce grooves 5 - 10 microns wide and up to 100 microns deep. These silicon wafers have been processed into solar cells with all processes performed at temperatures compatible with producing high efficiency solar cells. Theoretical calculations of the expected current as a function of radiation dose have been performed. An explanation of the observed open-circuit voltage is provided. Vertical junction solar cells have been fabricated with AM0 conversion efficiencies greater than 14. These cells have shown superior radiation resistance. Vertical junction cells have been fabricated in 2cm x 2cm, 2cm x 4cm and 2cm x 6cm sizes with no size dependence on efficiency or yield. Author
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- Solid State Physics
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