Accession Number:

ADA064419

Title:

Glow Discharge Optical Spectroscopy of Ion Implanted Gallium Arsenide.

Descriptive Note:

Master's Thesis,

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING

Personal Author(s):

Report Date:

1978-12-01

Pagination or Media Count:

74.0

Abstract:

Glow Discharge Optical Spectroscopy GDOS was used as a technique for obtaining impurity concentration profiles of annealed and unannealed ion implanted GaAs samples. Germanium, magnesium, and boron ions were implanted at energies of 60keV or 120keV and fluences of 1 or 5 times 10 to the 15th powersq.cm. The samples were sputtered in a dc glow discharge. The intensities of strong emission lines proportional to concentration were calibrated using pure elements as standards, providing impurity concentration profiles. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE