Glow Discharge Optical Spectroscopy of Ion Implanted Gallium Arsenide.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING
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Glow Discharge Optical Spectroscopy GDOS was used as a technique for obtaining impurity concentration profiles of annealed and unannealed ion implanted GaAs samples. Germanium, magnesium, and boron ions were implanted at energies of 60keV or 120keV and fluences of 1 or 5 times 10 to the 15th powersq.cm. The samples were sputtered in a dc glow discharge. The intensities of strong emission lines proportional to concentration were calibrated using pure elements as standards, providing impurity concentration profiles. Author
- Solid State Physics