Cathodoluminescence of Germanium Implanted Gallium Arsenide and the Effects of Laser Annealing.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING
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The primary objective of this study was to characterize experimental laser annealed samples using cathodoluminescence. Ten Cr-doped SI GaAs samples were studied. These samples included an unimplanted-unannealed sample, several unimplanted but laser annealed samples, Ge implanted thermally annealed and laser annealed samples, and a Ge implanted unannealed sample. The results indicated the experimental laser annealed samples to be partially or completely unannealed. The laser annealed samples were generally characterized by weak luminescence with peaks at 1.514 eV due to unresolved excitons, 1.488 eV attributed to ZnAs, and 1.469 eV damage related. It was further observed that in the thermally annealed samples, the dominat peak was noted at 1.488 eV instead of the expected 1.478 eV peak previously associated with Ge. Finally, the unannealed sample spectra emissions were characterized by a 1.493 eV peak attributed to CAs, and in all non-laser annealed samples a 1.36 eV peak attributed to CuGa was observed.
- Solid State Physics