Accession Number:

ADA064299

Title:

Evaluation of Gallium Nitride for Active Microwave Devices.

Descriptive Note:

Annual technical rept. Aug 77-Sep 78,

Corporate Author:

UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES ELECTRONIC SCIENCES LAB

Personal Author(s):

Report Date:

1978-09-01

Pagination or Media Count:

83.0

Abstract:

Thick GaN crystals can now be grown by the non-equilibrium CVD reaction of GaCl and NH3 that are free of the precipitates, voids and microcracks that plagued us last year. However, they are still dominated electrically by a native shallow donor effect. A high pressure-high temperature system for annealing crystals and for growing crystals by liquid phase epitaxy under high pressure N2 instead of NH3 has been assembled and calibrated, and the first epxeriments begun to eliminate the native donor, so as to prepare samples suitable for high field electrical measurements.

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE