Investigation of Interface States Using Metal-Oxide-Silicon Transistors and Pulse Gate Techniques. Volume I. Hall Effects Measurements.
NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH
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A single metal-oxide-silicon chip was designed containing capacitors for capacitance-voltage C-V and devices for Hall effect measurements on the channel region of a metal-oxide-silicon field effect transistor. These two measurements provide data to calculate interface state density Nss in the mid gap region and near the band edges as functions of surface potential. Both Hall and conductivity mobility are calculated. It was found that Nss increases with total gamma radiation dose in the mid gap region but may either increase or decrease near the band edges. implying that interface states may arise from different mechanisms. Dangling bond and oxygen deficiency models are discussed as pertaining to possible mechanisms. Mobility versus surface potential demonstrate consistent results. Strongly inverted device channels yield mobilities which are very insensitive to radiation, indicating predominance of carrier-carrier scattering. But lightly inverted channels demonstrate that mobility is highly dependent upon radiation, indicating predominance of carrier-interface scattering. Author
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