Accession Number:

ADA064067

Title:

Damage Studies of Ion-Implanted GaAs Using Conductivity Profiles.

Descriptive Note:

Master's thesis,

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING

Personal Author(s):

Report Date:

1978-12-01

Pagination or Media Count:

67.0

Abstract:

The understanding of damage produced during ion-implantation is an important first step towards predicting the semiconducting behavior of GaAs samples. A new technique for measuring damage has been developed by the Air Force Avionics Laboratory. This method involves the measurement of a differential electrical conductivity profile. Samples of GaAs doped with S, Te and Ar ions were prepared for the purpose of profiling them with this technique.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE