Damage Studies of Ion-Implanted GaAs Using Conductivity Profiles.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING
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The understanding of damage produced during ion-implantation is an important first step towards predicting the semiconducting behavior of GaAs samples. A new technique for measuring damage has been developed by the Air Force Avionics Laboratory. This method involves the measurement of a differential electrical conductivity profile. Samples of GaAs doped with S, Te and Ar ions were prepared for the purpose of profiling them with this technique.
- Solid State Physics