Photoluminescence of Gallium Indium Arsenic Phosphide.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING
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This report is the result of an attempt to see what impurity levels and defect levels were present in liquid phase epitaxy GaInAsP epilayers grown on InP substrates. Hopefully, the material contained herein will aid the Air Force Avionics Laboratory in their search for GaInAsP samples sufficiently pure, perfect, and thin 0.4 micrometers to use in the construction of improved microwave devices.
- Solid State Physics