Accession Number:

ADA064066

Title:

Photoluminescence of Gallium Indium Arsenic Phosphide.

Descriptive Note:

Master's thesis,

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING

Personal Author(s):

Report Date:

1978-09-01

Pagination or Media Count:

95.0

Abstract:

This report is the result of an attempt to see what impurity levels and defect levels were present in liquid phase epitaxy GaInAsP epilayers grown on InP substrates. Hopefully, the material contained herein will aid the Air Force Avionics Laboratory in their search for GaInAsP samples sufficiently pure, perfect, and thin 0.4 micrometers to use in the construction of improved microwave devices.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE