Accession Number:

ADA063961

Title:

Laser Annealing of Ion Implanted Gallium Arsenide.

Descriptive Note:

Master's thesis,

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING

Personal Author(s):

• Mason,Robert S.

Report Date:

1978-12-01

Pagination or Media Count:

68.0

Abstract:

Ion implanted GaAs, irradiated by a Q-switched ruby laser, is examined primarily by cathodoluminescence, as well as ellipsometry and electrical measurements, to evaluate the quality of laser anneal. Weak cathodoluminescence spectra from laser irradiated samples indicate far less radiative centers than in thermally annealed samples. Emitted radiation from existing centers is attenuated by the formation of a surface layer on GaAs during exposure to the ruby laser, resulting in spectra which is slightly weaker than spectra representative of the materials condition. This attenuating layer occurs in both virgin and implanted GaAs exposed to ruby laser radiation. Ion implanted Si, exposed to the same Q-switched ruby laser, is examined by Rutherford backscattering and indicates a return to crystallinity of the implant layer. Author

Descriptors:

• *ANNEALING
• *GALLIUM ARSENIDES
• *ION IMPLANTATION
• *RUBY LASERS
• Q SWITCHING
• EMISSION
• LAYERS
• THESES
• CRYSTALS
• LASERS
• SILICON
• ATTENUATION
• CATHODOLUMINESCENCE

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE