Laser Annealing of Ion Implanted Gallium Arsenide.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING
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Ion implanted GaAs, irradiated by a Q-switched ruby laser, is examined primarily by cathodoluminescence, as well as ellipsometry and electrical measurements, to evaluate the quality of laser anneal. Weak cathodoluminescence spectra from laser irradiated samples indicate far less radiative centers than in thermally annealed samples. Emitted radiation from existing centers is attenuated by the formation of a surface layer on GaAs during exposure to the ruby laser, resulting in spectra which is slightly weaker than spectra representative of the materials condition. This attenuating layer occurs in both virgin and implanted GaAs exposed to ruby laser radiation. Ion implanted Si, exposed to the same Q-switched ruby laser, is examined by Rutherford backscattering and indicates a return to crystallinity of the implant layer. Author
- Solid State Physics