Accession Number:

ADA063956

Title:

Noncoplanar High Power FET.

Descriptive Note:

Annual rept. no. 2, Jan-Dec 1976,

Corporate Author:

VARIAN ASSOCIATES INC PALO ALTO CA

Personal Author(s):

• Bandy,S. G.
• Sankaran,R.
• Hyder,S. B.
• Collins,D. M.

Report Date:

1978-10-27

Pagination or Media Count:

50.0

Abstract:

The use of low-doped tubs under the source and drain have significantly reduced the parasitic capacitances of a common-gate noncoplanar power FET structure. Submicron gate lengths were easily achieved with an etch and growth technique. Author

Descriptors:

• *FIELD EFFECT TRANSISTORS
• *POWER AMPLIFIERS
• *TRANSISTOR AMPLIFIERS
• HIGH POWER
• GALLIUM ARSENIDES
• SUBSTRATES
• CADMIUM
• DOPING
• GOLD
• GROOVING
• CAPACITANCE

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE