Accession Number:

ADA063937

Title:

Distributed Feedback Semiconductor Injection Laser with Efficient Feedback Coupling.

Descriptive Note:

Final rept. 15 Apr 75-2 Feb 77,

Corporate Author:

SPERRY RESEARCH CENTER SUDBURY MASS

Personal Author(s):

Report Date:

1977-11-01

Pagination or Media Count:

48.0

Abstract:

Attempts were made to produce a GaAs diode laser structure suitable for bombardment by 200 keV protons. The objective was to bombard the active region through a fine grating mesh in order to produce lasers whose gain varied periodically along the length of the junction. The requirements for the structure were that the local surface roughness be no more than the order of a wavelength of light, and that the active layer of the structure be within two microns of the surface. Difficulties were encountered in making morphologically acceptable layers. However, the resolution of those difficulties gave insight into the limitations of the sliding boat LPE technique. Poor device performance was ultimately attributed to the fundamental device structure rather than surface morphology. Author

Subject Categories:

  • Lasers and Masers
  • Solid State Physics
  • Non-Radio Communications

Distribution Statement:

APPROVED FOR PUBLIC RELEASE