Accession Number:

ADA063332

Title:

Dielectric Layers on III-V Semiconductors.

Descriptive Note:

Annual rept. 15 Jun 77-14 Jun 78,

Corporate Author:

COLORADO STATE UNIV FORT COLLINS DEPT OF PHYSICS

Personal Author(s):

Report Date:

1978-07-01

Pagination or Media Count:

14.0

Abstract:

Studies on the electronic profile of InAs epilayers have been completed. The use of ion beam sputtered silicon nitride as an encapsulant has been reported and the project extended to aluminum nitride. A new sputter system has been installed, and details of ion beam sputter damage are being examined. Author

Subject Categories:

  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE