Photoconductive Control of Microwaves.
NAVAL RESEARCH LAB WASHINGTON D C
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A phenomenological model of microstrip semiconductor modulators has been developed. The fundamental limitations on the device imposed by the photoconductive process were expressed in terms of the product of gain and bandwidth. Based on this analysis, an optical gap modulator was fabricated and tested. Its performance approached the fundamental limit imposed by the saturation of photoconductive carrier densities resulting from Auger processes. Drift mobility in the space-charge-limited region was measured and the surface mobility of holes in silicon was determined to be 160sq cmV-s. It was found that annealing induced photosensitivity in silicon, and associated charges in the dark I-V characteristics are consistent with the Mott-Gurney law. Author
- Electrooptical and Optoelectronic Devices