Optimization Study of IR-CCD Array.
Final technical rept. 15 Apr 77-11 Mar 78,
RCA LABS PRINCETON N J
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The IR-CCD arrays with platinum silicide Schottky-barrier detectors fabricated under this contract contain a 25x50-element area sensor and a 62-element line sensor. The above devices were processed with two-level polysilicon-gate buried-channel CCD registers for image readout. The platinum silicide detectors were made with implanted n-type guard rings. Such construction resulted in sufficiently low detector dark current at 77 K to allow frame-integration times of 30 to 100 ms. The process optimization included high-temperature sintering of the platinum silicide either at 650 deg for 10 minutes or for 30 minutes followed by a 20-minute hydrogen anneal at 550 C. Devices were also made with low-temperature sintering of platinum silicde at 320 C for 8 h in nitrogen followed by another 8 h in forming gas. Author
- Electrical and Electronic Equipment
- Infrared Detection and Detectors
- Solid State Physics