Basic Improvements in Substrate InP Material.
Final rept. 1 Feb 76-31 Jul 78,
VARIAN ASSOCIATES PALO ALTO CA SOLID STATE LAB
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Extremely high purity polycrystalline InP was prepared from solution, having background carrier concentration of 4 x 10 to the 14th powercc and mobility at 77 K greater than 90,000. When this material is used for the growth of undoped single crystal it results in ND-NA 1 x 10 to the 15th powercc and mobility 53,000. Low temperature PL also indicate both materials to be of extremely high purity. Preliminary results indicate that doping of single crystal InP by Sn, Fe and particularly Zn results in improved defect density. Author
- Solid State Physics