IC Fabrication Using Electron-Bean Technology.
Quarterly rept. no. 7, 1 Mar-1 Jun 78,
TEXAS INSTRUMENTS INC DALLAS
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A New positive electron resist TI-313 has been implemented for fabrication of 256-bit bipolar RAMs. This TI-313 resist has allowed plasma etching at each oxide removal step in the process. The pinhole data on this resist after oxide etch is comparable with that measured on the best standard negative photoresists. Previous attempts at fabricating the 256-bit bipolar RAMs have failed due to the high number of defects in the oxide caused by an inherent problem with PBS electron resist during wet etching. In addition, a change was made from the double-level metal 256-bit bipolar RAM 54S300 to the single-level metal 256-bit bipolar RAM 74S301A. This change was made because the TI-Houston production facility was achieving extremely low yields on the 54S200300 and had discontinued production. These changes have allowed fabrication of functional devices during this quarter. Author
- Electrical and Electronic Equipment
- Particle Accelerators