Accession Number:

ADA061685

Title:

Electronic Profile of n-InAs on Semi-Insulating GaAs.

Descriptive Note:

Technical rept.,

Corporate Author:

COLORADO STATE UNIV FORT COLLINS DEPT OF PHYSICS

Report Date:

1978-10-20

Pagination or Media Count:

31.0

Abstract:

Electron density and mobility are measured in three regions of InAs epilayers on GaAs substrate 1 The interfacial layer shows an increase in density and decrease in mobility over a 3 micron distance 2 the bulk of the epilayer has n approx. 110 to the 16th power cc, mu approx. 100000 sq. cmV-sec 3 the front surface, accumulated at zero bias, displays surface quantization effects and an enhanced effective mass. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE