Electronic Profile of n-InAs on Semi-Insulating GaAs.
COLORADO STATE UNIV FORT COLLINS DEPT OF PHYSICS
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Electron density and mobility are measured in three regions of InAs epilayers on GaAs substrate 1 The interfacial layer shows an increase in density and decrease in mobility over a 3 micron distance 2 the bulk of the epilayer has n approx. 110 to the 16th power cc, mu approx. 100000 sq. cmV-sec 3 the front surface, accumulated at zero bias, displays surface quantization effects and an enhanced effective mass. Author
- Solid State Physics