Accession Number:

ADA061652

Title:

Silicon Nitride Layers on Gallium Arsenide by Low Energy Ion Beam Sputtering.

Descriptive Note:

Technical rept.,

Corporate Author:

COLORADO STATE UNIV FORT COLLINS DEPT OF PHYSICS

Personal Author(s):

Report Date:

1978-10-01

Pagination or Media Count:

21.0

Abstract:

Low energy ion beam sputtering with argon was used to deposit layers of Si3N4 onto GaAs for encapsulation purposes. Mechanical stability to above 900 C has been achieved silicon diffuses into the GaAs at 600 C and above index of refraction is a simple, but reliable test of encapsulant quality. Author

Subject Categories:

  • Ceramics, Refractories and Glass
  • Fabrication Metallurgy
  • Particle Accelerators

Distribution Statement:

APPROVED FOR PUBLIC RELEASE