Silicon Nitride Layers on Gallium Arsenide by Low Energy Ion Beam Sputtering.
COLORADO STATE UNIV FORT COLLINS DEPT OF PHYSICS
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Low energy ion beam sputtering with argon was used to deposit layers of Si3N4 onto GaAs for encapsulation purposes. Mechanical stability to above 900 C has been achieved silicon diffuses into the GaAs at 600 C and above index of refraction is a simple, but reliable test of encapsulant quality. Author
- Ceramics, Refractories and Glass
- Fabrication Metallurgy
- Particle Accelerators