Accession Number:

ADA061499

Title:

Negativeu states in the Gap in Hydrogenated Amorphous Silicon,

Descriptive Note:

Corporate Author:

PRINCETON UNIV N J DEPT OF PHYSICS

Personal Author(s):

• Fisch,Ronald
• Licciardello,Donald C.

Report Date:

1978-10-01

Pagination or Media Count:

12.0

Abstract:

We propose that Si-H-Si three center bonds exists in hydrogenated amorphous silicon. These centers give rise to states in the energy gap which have a negative effective electronic correlation energy, U. Our model can explain many of the known properties of this material. We make suggestions about how to obtain materials which may prove useful in electronic device applications.

Descriptors:

• *AMORPHOUS MATERIALS
• *SEMICONDUCTORS
• *SILICON COMPOUNDS
• ENERGY TRANSFER
• CHEMICAL BONDS
• ELECTRONIC STATES
• HOLES(OPENINGS)
• HYDROGENATION
• GERMANIUM COMPOUNDS

Subject Categories:

• Ceramics, Refractories and Glass
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE