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Negativeu states in the Gap in Hydrogenated Amorphous Silicon,
PRINCETON UNIV N J DEPT OF PHYSICS
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We propose that Si-H-Si three center bonds exists in hydrogenated amorphous silicon. These centers give rise to states in the energy gap which have a negative effective electronic correlation energy, U. Our model can explain many of the known properties of this material. We make suggestions about how to obtain materials which may prove useful in electronic device applications.
APPROVED FOR PUBLIC RELEASE