Radiation Effects on Charge-Coupled Devices and other MOS Structures.
Final rept. May 77-Apr 78,
NORTHROP RESEARCH AND TECHNOLOGY CENTER PALOS VERDES PENINSULA CA
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This report describes results of radiation effects studies on charge-coupled devices CCDs and other MOS structures. Emphasis is placed on determining the basic mechanisms of the interaction of radiation with such devices with a view toward gaining understanding of benefit to developers of radiation-tolerant devices. A study of neutron damage mechanisms in CCDs was performed with emphasis placed on investigation of dark current increases.
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics