Accession Number:

ADA061116

Title:

Heavy Ion Radiation Effects in VLSI,

Descriptive Note:

Corporate Author:

ROME AIR DEVELOPMENT CENTER GRIFFISS AFB N Y

Personal Author(s):

Report Date:

1978-05-01

Pagination or Media Count:

23.0

Abstract:

Impressive results have been achieved using electron beam, soft x-ray, or synchrotron radiation for lithography and photoresist exposure. Application to microelectronic circuitry paved the way for Very Large Scale Integration VLSI in which device sizes of micron and submicron dimension are forecast. This small size presents new problems for radiation effects test and assessment. One example is the interaction of heavy ions namely, cosmic rays with a VLSI size device and the associated nonequilibrium dosimetry involved. This report treats the case of VLSI exposure in satellite environment. The numbers suggest that very small size is not a desirable feature for devices in that environment. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE