Studies of Solid State Reactions on Elemental and Compound Semiconductor Surfaces.
Final rept. 1 May 75-30 Apr 78,
GEORGIA INST OF TECH ATLANTA APPLIED SCIENCES LAB
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The results of investigations on the solid state reactions which occur at the various interfaces in thin composite structures on the elemental and compound semiconductors, silicon and gallium arsenide, are reported. Free energies derived from bulk thermodynamic data predict the direction of oxidation-reduction reactions at interfaces. The identification of the resulting solid state phases used high energy resolution Auger electron spectroscopy AES and X-ray photoelectron spectroscopy XPS techniques and the chemical shifts in energy associated with Auger or photoelectron peaks when an element is oxidized. Experimental MOS and Schottky barrier test structures were fabricated to correlate the chemical data and other interface characteristics with electrical measurements. Theoretical interpretation of data from high energy resolution AES and XPS studies of thin films on aluminum gave a value for the attenuation length of approx. 1400 eV electrons in Al2O3 and information on various electron scattering mechanisms. A review of GaAs passivation is made and a method based upon interface reactions is suggested.
- Atomic and Molecular Physics and Spectroscopy
- Solid State Physics