Accession Number:

ADA059494

Title:

Dynamic Properties of Interface States in MOS-Structures.

Descriptive Note:

Final technical rept. 1 Jan-31 Dec 77,

Corporate Author:

FRAUNHOFER-GESELLSCHAFT FREIBURG (GERMANY F R) INST FUER ANGEWANDTE FESTKOERPERPHYSIK

Report Date:

1978-04-01

Pagination or Media Count:

35.0

Abstract:

The dynamic properties of impurities implanted into the interface of MOS structures are investigated. Interface state density, trapping time constants and capture cross sections are measured. Capacitance and conductance measurement techniques are used. Special consideration is placed on the DLTS Deep Level Transient Spectroscopy -method. This method was applied to MOS structures for the first time. The interface state density of implanted MOST structures shows a continuous distribution versus energy. The increase to the band edge is steeper and more distinct in implanted structures than in clean non-implanted samples. The capture cross section drops towards the band edge independent of the implanted species. Its magnitude is always of the same order as in clean samples. Influences of radiation damage can clearly be observed and separated from the continuous interface state spectrum. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE