Dynamic Properties of Interface States in MOS-Structures.
Final technical rept. 1 Jan-31 Dec 77,
FRAUNHOFER-GESELLSCHAFT FREIBURG (GERMANY F R) INST FUER ANGEWANDTE FESTKOERPERPHYSIK
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The dynamic properties of impurities implanted into the interface of MOS structures are investigated. Interface state density, trapping time constants and capture cross sections are measured. Capacitance and conductance measurement techniques are used. Special consideration is placed on the DLTS Deep Level Transient Spectroscopy -method. This method was applied to MOS structures for the first time. The interface state density of implanted MOST structures shows a continuous distribution versus energy. The increase to the band edge is steeper and more distinct in implanted structures than in clean non-implanted samples. The capture cross section drops towards the band edge independent of the implanted species. Its magnitude is always of the same order as in clean samples. Influences of radiation damage can clearly be observed and separated from the continuous interface state spectrum. Author
- Solid State Physics