MM and T Program for the Establishment of Production Techniques for High Power Bulk Semiconductor Limiters.
Quarterly rept. no. 6, 23 Sep-22 Dec 77,
MICROWAVE ASSOCIATES INC BURLINGTON MASS
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X-band bulk limiters have been fabricated using high resistivity silicon rho 12,000 to 18,000 ohm-cm, p-type, uncompensated 111 orientation. These bulk limiters exhibit 3.0 dB bandwidth of 0.6 - 0.8 GHz and power handling capability of 20 - 30 kW. As a cost reduction measure, low cost stamped copper irises have been introduced for mounting the bulk limiter chips. The limiter input section was redesigned to obtain improved performance and prevent arcing at high RF power levels. Various parameters are being optimized to achieve both bandwidth and RF power goals of the contract. Author
- Electrical and Electronic Equipment
- Fabrication Metallurgy