High Density Magnetic Bubble Memory Techniques.
Interim rept. 4 Nov 76-4 May 77,
ROCKWELL INTERNATIONAL ANAHEIM CA ELECTRONICS RESEARCH CENTER
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Films of a CaGe - substituted version of the YSmTmIG material have been prepared and characterized. Device structures with 8 micron and 4 micron periods have been fabricated on the Ga- and CaGe - substituted materials. The test results show that the substituted YSmTmIG is an attractive composition for small bubble devices. High quality small bubble films have been grown on 3 in. diameter substrates. An improved process for forming mesas in self-biased films was devised and evaluated. Self-biased wafers were processed with 16 micron period serial shift registers and the devices have been operated at quasistatic frequencies. The analytical results on self-biased structures have been revised using a more exact formulation for the magnetostatic interaction. The feasibility of the period stretching and pattern stitching concepts has been demonstrated. The large capacity chip component test pattern was completed and operation of all components has been verified. A conceptual design of a 10 to the 12th power bit bubble memory system was completed. Author
- Computer Hardware
- Electricity and Magnetism