Semiannual technical summary 1 Oct 77-31 Mar 78,
MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
Pagination or Media Count:
The current objectives of the electrooptical device program are 1 to perform life tests on GaInAsPInP double-heterostructure DH diode lasers operating in the 1.0- to 1.3 micro m wavelength region and analyze the degradation mechanisms, and 2 to fabricate and study avalanche photodiodes of similar composition GaInAsP operating in the same wavelength region. Room-temperature CW operation of DH GaInAsPInP stripe-geometry lasers for periods of 1000 to 7000 hr now seems to be routine. At higher temperatures, one mode of degradation has been tentatively identified as being due to increasing thermal resistance of the diode heat-sink contact.
- Lasers and Masers
- Electrooptical and Optoelectronic Devices