Gallium Arsenide Materials Growth and Processing.
Final scientific rept.,
TEXAS INSTRUMENTS INC DALLAS CENTRAL RESEARCH LABS
Pagination or Media Count:
Continuous, in situ rate measurements were employed to evaluate the influence of gas phase supersaturation on the gallium arsenide epitaxial growth kinetics relative to the extent of heterogeneous nucleation and extraneous deposition on fused silica. The resulting kinetic data permit establishment of the optimum conditions for selective epitaxial growth of gallium arsenide at subnormal temperatures using the classic galliumarsenic trichloridehydrogen chemical vapor deposition process. Specifically, the extent of extraneous deposition is minimized through the use of low arsenic partial pressures entering the source region or through the use of small source surface areas.
- Solid State Physics