Accession Number:

ADA059017

Title:

Gallium Arsenide Materials Growth and Processing.

Descriptive Note:

Final scientific rept.,

Corporate Author:

TEXAS INSTRUMENTS INC DALLAS CENTRAL RESEARCH LABS

Personal Author(s):

Report Date:

1978-06-01

Pagination or Media Count:

15.0

Abstract:

Continuous, in situ rate measurements were employed to evaluate the influence of gas phase supersaturation on the gallium arsenide epitaxial growth kinetics relative to the extent of heterogeneous nucleation and extraneous deposition on fused silica. The resulting kinetic data permit establishment of the optimum conditions for selective epitaxial growth of gallium arsenide at subnormal temperatures using the classic galliumarsenic trichloridehydrogen chemical vapor deposition process. Specifically, the extent of extraneous deposition is minimized through the use of low arsenic partial pressures entering the source region or through the use of small source surface areas.

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE