Analysis of Semiconductor Structures by Nuclear and Electrical Techniques.
Final technical rept.,
CALIFORNIA INST OF TECH PASADENA DEPT OF ELECTRICAL ENGINEERING
Pagination or Media Count:
This report summarizes the results obtained under a contract from 1974 to 1977, focusing on silicide formation of thin metal films on a Si substrate. The main thrust of the effort was directed at 1 Development of the data base on thin-film silicide formation, and the investigation of the influence of the Si substrate on the silicide formation. When taken in context with results of other studies, the data obtained exhibit a clear pattern of behavior among the various metal films, but the detailed picture appears to be complex 2 Development of marker experiments by ion-implanted Ar or Xe markers 3 Clarification of the role played by oxygen contamination in silicide formation 4 Stability of silicide layers 5 Reaction of metal layers with SiO2 6 Electrical characteristics of Pd2Si and 7 A computer program was written to synthesize backscattering spectra for thin-film samples composed of successive layers of uniform thickness and composition.
- Solid State Physics