Accession Number:

ADA058772

Title:

Analysis of Semiconductor Structures by Nuclear and Electrical Techniques.

Descriptive Note:

Final technical rept.,

Corporate Author:

CALIFORNIA INST OF TECH PASADENA DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1978-06-01

Pagination or Media Count:

25.0

Abstract:

This report summarizes the results obtained under a contract from 1974 to 1977, focusing on silicide formation of thin metal films on a Si substrate. The main thrust of the effort was directed at 1 Development of the data base on thin-film silicide formation, and the investigation of the influence of the Si substrate on the silicide formation. When taken in context with results of other studies, the data obtained exhibit a clear pattern of behavior among the various metal films, but the detailed picture appears to be complex 2 Development of marker experiments by ion-implanted Ar or Xe markers 3 Clarification of the role played by oxygen contamination in silicide formation 4 Stability of silicide layers 5 Reaction of metal layers with SiO2 6 Electrical characteristics of Pd2Si and 7 A computer program was written to synthesize backscattering spectra for thin-film samples composed of successive layers of uniform thickness and composition.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE