Accession Number:

ADA058740

Title:

High-Speed Electron-Beam Lithographic Resists for Micron and Submicron Integrated Circuits.

Descriptive Note:

Research and development technical rept.,

Corporate Author:

ARMY ELECTRONICS RESEARCH AND DEVELOPMENT COMMAND FORT MONMOUTH NJ ELECTRONICS TECHNOLOGY/DEVICES LAB

Report Date:

1978-07-01

Pagination or Media Count:

16.0

Abstract:

Next-generation RADAR and ELINT systems are planned to provide the field commander with comprehensive intelligence on the disposition of enemy weapons and electronics equipment. Ultra-compact signal processors with unprecedented capabilities are the heart of these systems. Fabrication of the required high-density integrated circuits, with elements in the micron-to-submicron range is beyond the resolution limit of state-of-the-art optical photolithography. Electron-beam lithography can easily meet the required 4X improvement in image resolution, but is not economically feasible because of low resist sensitivity and resultant long circuit-write times. A resist speed increase of 10X to 30X is needed. Conventional cut-and-try resist research has failed to provide suitable materials. The problem of resist speed is approached through study of the fundamental mechanisms of polymer radiation damage. By this means, several new resists of much higher radiation susceptability than the current industry standard polymethyl methacrylate are conceived.

Subject Categories:

  • Electrical and Electronic Equipment
  • Plastics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE