Accession Number:

ADA058426

Title:

Electronic Structure and Properties of the Oxides of the Tetrahedral Semiconductors and Their Interfaces.

Descriptive Note:

Final rept. 1 Jun 76-31 May 78,

Corporate Author:

IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS N Y

Personal Author(s):

Report Date:

1978-07-31

Pagination or Media Count:

145.0

Abstract:

A simple but general model is developed in which the electronic structure and spectra of SiO2, GeO2 and the ABO4-type oxides are studied in a systematic way. Methods have also been developed in terms of which are calculated the energy levels of impurities in bulk SiO2 and at the Si-SiO2 interface, and the electronic structure of free surfaces and interfaces between crystalline materials. The main objectives of the work reported here were to obtain a theoretical description of the electronic structure and properties of the oxides of the tetrahedral semiconductors in particular, SiO2, GeO2, and the ABO4-type oxides, where AB is a tetrahedral semiconductor and their interfaces with other materials and vacuum.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE