Accession Number:

ADA058198

Title:

Advanced Archival Memory

Descriptive Note:

Quarterly rept. no. 2, 16 Jul-15 Oct 1976

Corporate Author:

GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT SCHENECTADY NY

Report Date:

1977-04-01

Pagination or Media Count:

167.0

Abstract:

During this reporting period, effort in the archival memory program included experimental work and theoretical studies on planar diode structures memory target substrate, implantation of ions to write information on a planar diode structure, feasibility studies of the alloy junction method of writing using a NdYAG laser, the design and construction of a heated stage for alloy junction studies and the initiation of writing optics studies. Studies and experimental verifications indicate that ion beam writing can be achieved using field emission ion sources. Alloy junction bit sites were successfully formed using a laser beam.

Subject Categories:

  • Computer Hardware

Distribution Statement:

APPROVED FOR PUBLIC RELEASE