Accession Number:

ADA056862

Title:

Encapsulation and Annealing of Sulfur and Selenium Implanted Gallium Arsenide

Descriptive Note:

Final rept. 1 May 1975-10 Sep 1977

Corporate Author:

SRI INTERNATIONAL MENLO PARK CA

Personal Author(s):

• Magee, T. J.
• Gibbons, J. F.
• Lidow, A.
• Peng, J.
• Ammar, E.

Report Date:

1978-03-24

Pagination or Media Count:

97.0

Abstract:

This report describes progress on a program to investigate encapsulation films used as annealing caps on ion implanted GaAs samples and to develop alternative procedures and techniques for improving the efficiency of n- type ion implants. The major high impact technological achievement of this research program has been the development and perfection of a chemically inert double layered encapsulation system which improves the electrical performance of ion implanted layers as well as allowing reliable annealing at temperatures up to 1100 C.

Descriptors:

• *SEMICONDUCTORS
• *ION IMPLANTATION
• *GALLIUM ARSENIDES
• MICROWAVE EQUIPMENT
• BACKSCATTERING
• DEFECTS(MATERIALS)
• ENCAPSULATION
• N TYPE SEMICONDUCTORS
• SULFUR
• ELECTRIC CONTACTS
• RADIATION DAMAGE
• SILICON NITRIDES
• SILICON DIOXIDE
• SELENIUM
• ANNEALING
• MICROSTRUCTURE

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE