IC Fabrication Using Electron-Beam Technology.
Quarterly rept. no. 5. 1 Sep-1 Dec 77,
TEXAS INSTRUMENTS INC DALLAS
Pagination or Media Count:
Continuity and integrity of electron beam resist films under device processing conditions can control the functional yield of integrated circuits fabricated using electron-beam technology. This report describes several electrical and optical evaluations of oxide pinhole density related to process induced defects in PBS and TI-313 electron resist films. Such pinholes are believed to be the cause of the zero functional yield observed on first lots of 256-bit bipolar RAM circuits fabricated with PBS resist. Results of these comparative tests indicate that the TI-313 electron resist and associated processing gives significantly better film continuity and step coverage then the PBS, being comparable to commercially available photoresist. It is thus concluded that implementation of the TI-313 electron resist technology into the process sequence already established will permit fabrication of working 256-bipolar RAM circuits in the immediate future. Author
- Electrical and Electronic Equipment
- Manufacturing and Industrial Engineering and Control of Production Systems