Accession Number:

ADA056582

Title:

ESR Centers and Charge Defects Near the Silicon/Silicon Dioxide Interface.

Descriptive Note:

Research and development technical rept.,

Corporate Author:

ARMY ELECTRONICS RESEARCH AND DEVELOPMENT COMMAND FORT MONMOUTH NJ ELECTRONICS TECHNOLOGY/DEVICES LAB

Personal Author(s):

• Poindexter,Edward H.
• Ahlstrom,Edwin R.
• Caplan,Philip J.

Report Date:

1978-04-01

Pagination or Media Count:

9.0

Abstract:

The Nishi-B esr center has been examined as a function of thermal oxidation and annealing conditions in single-crystal silicon wafers. It was observed that B concentration was not correlated with fixed surface-state charge density Q, despite some similarities in their behavior. In freshly oxidized wafers, B typically ranges up to 200 per nm sq, and Q up to 50 per nm sq. The concentration of B is highly dependent on cooling rates concentration does not depend on oxide thickness and B may be observed even in native oxides. The g-value of the orientation-averaged B signal 2.0064 favors its assignment to trivalent Si in a silicon environment, as in crushed silicon 2.0055, rather than to the well-studied E centers 2.0008 found in various forms of damaged silicon dioxide. In our thermal oxides, E centers were unobservable, and thus cannot be the main source of Q, despite their nominal positive charge. Preliminary evidence shows a correlation of B with initial, unannealed fast interface states N, supporting the idea that trivalent Si is the origin of these states. Author

Descriptors:

• *SEMICONDUCTORS
• *ELECTRON SPIN RESONANCE
• *CRYSTAL DEFECTS
• INTERFACES
• SILICON DIOXIDE
• METAL OXIDE SEMICONDUCTORS
• SURFACE PROPERTIES
• SILICON
• WAFERS
• Q FACTOR

Subject Categories:

• Crystallography
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE