Accession Number:

ADA056441

Title:

Auger Spectra of Silicon Dioxide Surface Defect Centers,

Descriptive Note:

Corporate Author:

ARMY ELECTRONICS RESEARCH AND DEVELOPMENT COMMAND FORT MONMOUTH NJ ELECTRONICS TECHNOLOGY/DEVICES LAB

Personal Author(s):

• Schwidtal,Klaus

Report Date:

1978-05-01

Pagination or Media Count:

10.0

Abstract:

It is shown that Auger electron spectroscopy can reveal the absolute energy level, with respect to the valence band edge, of Si dangling bond electrons in silicon dioxide. A theoretical model is proposed, and the Auger Electron distribution NE for the LVV transition band is calculated for a stoichiometric silicon dioxide surface, and for a silicon oxide surface with unpaired, dangling bond electrons. The latter is characterized by an additional LVD transition band, where D is the energy level of the unpaired electron. The theoretical NE curves are compared with experimental NE curves for a pristine, and for an electron radiation damaged quartz surface. Good agreement with the theoretical model is obtained, if D is assumed to lie 7.2 eV above the valence band edge. Author

Descriptors:

• *SILICON DIOXIDE
• *SURFACES
• *ENERGY LEVELS
• *AUGER ELECTRON SPECTROSCOPY
• INTERFACES
• INTEGRATED CIRCUITS
• DEFECTS(MATERIALS)
• QUARTZ

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE