Ion Implantation of Wide Bandgap Semiconductors.
Semiannual technical rept. 1 Oct 77-31 Mar 78,
HUGHES RESEARCH LABS MALIBU CALIF
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The principle dopant studied under this contract is Si n-type. Topics covered in this report include 1 encapsulation technology 2 transferability of Si implantation technology using plasma-deposition silicon nitride encapsulation and 3 problems associated with performing channeling into 110 crystal axes of a 100-oriented GaAs wafer. Author
- Solid State Physics