Accession Number:

ADA056125

Title:

Ion Implantation of Wide Bandgap Semiconductors.

Descriptive Note:

Semiannual technical rept. 1 Oct 77-31 Mar 78,

Corporate Author:

HUGHES RESEARCH LABS MALIBU CALIF

Personal Author(s):

• Anderson,C. L.
• Dunlap,H. L.
• Ramiller,C. L.

Report Date:

1978-05-01

Pagination or Media Count:

22.0

Abstract:

The principle dopant studied under this contract is Si n-type. Topics covered in this report include 1 encapsulation technology 2 transferability of Si implantation technology using plasma-deposition silicon nitride encapsulation and 3 problems associated with performing channeling into 110 crystal axes of a 100-oriented GaAs wafer. Author

Descriptors:

• *ION IMPLANTATION
• *N TYPE SEMICONDUCTORS
• ANNEALING
• PLASMAS(PHYSICS)
• GALLIUM ARSENIDES
• SINGLE CRYSTALS
• NITROGEN
• SILICON
• SILANES
• WAFERS
• ARGON

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE