Accession Number:

ADA056005

Title:

Radiation Effects on MOS/SOS Semiconductor Devices.

Descriptive Note:

Final technical rept. 1 Feb 76-31 Jan 78,

Corporate Author:

PRINCETON UNIV N J DEPT OF AEROSPACE AND MECHANICAL SCIENCES

Personal Author(s):

• Royce,B. S. H.

Report Date:

1978-01-31

Pagination or Media Count:

44.0

Abstract:

Measurements have been made on radiation induced leakage currents in MOSSOS structures and the effects of optical bleaching and further irradiation under zero bias conditions have been studied. In order to understand the role played by bulk traps in Al2O3 in the radiation induced leakage currents and to identify the possible lattice defects associated with these traps. Thermally Stimulated Current Techniques have been employed. Optical bleaching and trap repopulation studies have been made in conjunction with the thermally stimulated current measurements. A review of data on trapping states in Al2O3 is presented and models for the trapping and charge compensation processes involved in the back channel leakage are discussed. Author

Descriptors:

• *SEMICONDUCTOR DEVICES
• *COMPLEMENTARY METAL OXIDE SEMICONDUCTORS
• *RADIATION DAMAGE
• HETEROJUNCTIONS
• FABRICATION
• HOLES(ELECTRON DEFICIENCIES)
• TRAPPING(CHARGED PARTICLES)

Subject Categories:

• Radioactivity, Radioactive Wastes and Fission Products
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE